Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

• Mengqi Fu,
• Roman Hartmann,
• Julian Braun,
• Sergej Andreev,
• Torsten Pietsch and
• Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

• controlled sequence along the long axis of the nanowires. Both magnetic switching and excitation phenomena driven by spin-polarized currents were clearly demonstrated in our NiCu/Cu multilayered nanowires. Moreover, the critical currents for switching and excitation were observed to be modulated in an

Influence of magnetic domain walls on all-optical magnetic toggle switching in a ferrimagnetic GdFe film

• Rahil Hosseinifar,
• Evangelos Golias,
• Ivar Kumberg,
• Quentin Guillet,
• Karl Frischmuth,
• Sangeeta Thakur,
• Mario Fix,
• Manfred Albrecht,
• Florian Kronast and
• Wolfgang Kuch

Beilstein J. Nanotechnol. 2022, 13, 74–81, doi:10.3762/bjnano.13.5

• deterministic toggle switching. Keywords: all-optical magnetic switching; GdFe; laser-induced domain-wall motion; magnetic domain imaging; photoemission electron microscopy; Introduction The reversal of magnetization at the fastest possible time scales and microscopic length scales is one of the most

On the relaxation time of interacting superparamagnetic nanoparticles and implications for magnetic fluid hyperthermia

• Andrei Kuncser,
• Nicusor Iacob and
• Victor E. Kuncser

Beilstein J. Nanotechnol. 2019, 10, 1280–1289, doi:10.3762/bjnano.10.127

• be investigated further by time-dependent simulations. Time-dependent approach: simulation and data analysis The magnetic switching of each nanoparticle in all three geometric configurations described above has been investigated via time-dependent (dynamic) micromagnetic simulations (numerical

• ) from Figure 4a like dependencies. In this respect, a C++ program has been developed for automatically computing the number of magnetic switching events over a certain period (e.g., during 100 ns) from such time-dependent magnetization curves. Given a noise of 0.2 in Figure 4a like curves, any jump of

Effective sensor properties and sensitivity considerations of a dynamic co-resonantly coupled cantilever sensor

• Julia Körner

Beilstein J. Nanotechnol. 2018, 9, 2546–2560, doi:10.3762/bjnano.9.237

• magnetic properties. This led to the first time observation of magnetic switching of these individual Heusler nanoparticles at room temperature and with a comparatively simple setup (laser-deflection detection) [16]. Other experiments in magnetic force microscopy showed a likewise increase in sensitivity

Solid-state Stern–Gerlach spin splitter for magnetic field sensing, spintronics, and quantum computing

• Kristofer Björnson and
• Annica M. Black-Schaffer

Beilstein J. Nanotechnol. 2018, 9, 1558–1563, doi:10.3762/bjnano.9.147

• “on” and “off” states for n even and odd, respectively, and we therefore define the magnetic switching quantum An alternative way to encode 1 and 0 is to use the currents of up- and down-spins, respectively. This requires normal leads through which both up- and down-spins can be transported. We

Grazing-incidence optical magnetic recording with super-resolution

• Gunther Scheunert,
• Sidney. R. Cohen,
• René Kullock,
• Ryan McCarron,
• Katya Rechev,
• Ifat Kaplan-Ashiri,
• Ora Bitton,
• Paul Dawson,
• Bert Hecht and
• Dan Oron

Beilstein J. Nanotechnol. 2017, 8, 28–37, doi:10.3762/bjnano.8.4

• may open an alternative route to high-durability HAMR. Magnetic switching is demonstrated on consumer-grade CoCrPt perpendicular magnetic recording media using a green and a near-infrared diode laser. Sub-500 nm magnetic features are written in the absence of a NFT in a moderate bias field of only μ0H

• (featuring PMR CoCrPt recording medium, TC ≈ 880 K) we demonstrate, by proper choice of parameters, that even laser powers comparable to SPR-HAMR already cause magnetic switching in the presence of a homogeneous magnetic bias field of μ0HB = 0.3 T – at a resolution six times smaller than the laser spot size

• plausible reasons for this discrepancy are i) a stronger lateral heat diffusion in the experimental case (the model assumes isotropic heat diffusion with material constants applicable to macroscopic bodies) and ii) the dynamics of the magnetic switching process. The latter point, however, is less likely to

Magnetic switching of nanoscale antidot lattices

• Ulf Wiedwald,
• Joachim Gräfe,
• Kristof M. Lebecki,
• Maxim Skripnik,
• Felix Haering,
• Gisela Schütz,
• Paul Ziemann,
• Eberhard Goering and
• Ulrich Nowak

Beilstein J. Nanotechnol. 2016, 7, 733–750, doi:10.3762/bjnano.7.65

• Republic 10.3762/bjnano.7.65 Abstract We investigate the rich magnetic switching properties of nanoscale antidot lattices in the 200 nm regime. In-plane magnetized Fe, Co, and Permalloy (Py) as well as out-of-plane magnetized GdFe antidot films are prepared by a modified nanosphere lithography allowing

• ; magnetic nanostructures; magnetic switching; micromagnetic simulations; plasma etching; spin ice; X-ray microscopy; Introduction In nanotechnology, a widely used approach for tailoring physical properties on the nanometre length scale is the introduction of practically circular holes – so-called antidots

• smaller d/a ratio of about 0.5. FORC-MOKE investigations show magnetic switching dominated by domain wall pinning while the larger antidots reverse individually. Upon releasing the field from a fully magnetised state, we obtain stripe domains for large antidots of d = 165 nm at a = 200 nm by both

Tuning the properties of magnetic thin films by interaction with periodic nanostructures

• Ulf Wiedwald,
• Felix Haering,
• Stefan Nau,
• Carsten Schulze,
• Herbert Schletter,
• Denys Makarov,
• Alfred Plettl,
• Karsten Kuepper,
• Manfred Albrecht,
• Johannes Boneberg and
• Paul Ziemann

Beilstein J. Nanotechnol. 2012, 3, 831–842, doi:10.3762/bjnano.3.93

• magnetization. The impact of the particles on the magnetic switching behavior is measured by both integral magnetometry and magnetic microscopy techniques. We observe enhanced coercive fields while the switching field distribution is broadened compared to thin-film reference samples. It appears possible to

• following we first discuss the achievements and limitations of the technique. Then the tailoring of the magnetic switching process is presented for in-plane- and out-of-plane-magnetized films. Finally, an alternative approach towards smaller defect structures is introduced. We studied the magnetic reversal

• films on the magnetic switching, as discussed above. The strongest influence of the imprinted nanostructures on the magnetic switching behavior may be expected when the diameter and/or distance matches a magnetic length scale such as the domain wall width of unperturbed films. In such a case, growing